features low cost diffus ed junction low leakage low forward voltage drop high current capability mechanical data ca s e: j e d e c d o - 15 , m o l ded p l a s t i c terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode w e i gh t : 0 . 01 4 oun c e s , 0 . 39 g r a m s mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,50 hz,resistive or inductive load. for capacitive load,derate by 20%. byv27 -50 byv27 -150 byv27 -200 byv27 -300 byv27 -400 byv27 -600 units maximum recurrent peak reverse voltage v rrm 50 150 200 300 4 0 0 600 v max imum rms v oltage v rms 35 105 140 210 280 420 v maximum dc blocking voltage v dc 50 150 200 300 400 600 v maximum average forw ard rectif ied current 9.5mm lead length, @t a =75 peak forw ard surge current 10ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ i f =i f ( av ) v f 1.25 v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja / w operating junction temperature range t j storage temperature range t stg 3. thermal resistance f rom junction to ambient. a i r i fsm note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 100.0 a 0.98 2. measured at 1.0mhz and applied rev erse v oltage of 4.1v dc. 1.05 - 55 ----- + 150 - 55 ----- + 150 i f(av) 25 50 70 40.0 62 100 a byv27 -100 100 1.6 2.0 1.9 5.0 50.0 d o - 15 100 byv27-50 (z) - - - byv27-600 (z) s u per f a st r ec t i f i e r s v o l t a g e r a n g e : 5 0 --- 6 0 0 v current: 2.0, 1.9,1.6 a maximum ratings and electrical characteristics easily cleaned with alcohol,isopropanol and s im ilar s olvents dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes byv27-50 (z) - - - byv27-600 (z) fi g. 1 -- test ci rcui t di agram and reverse recovery ti me characteri sti c instantaneous forward voltage, volts fi g. 4 -- typi cal juncti on capaci tance set tim e base for 10 ns/cm notes:1.rise time = 7ns m ax.input impedance =1m . 22pf. jjjj 2.rise time =10ns max.source impedance=50 . fig.2 -- typical forward characteristic fig.3 -- forward derating curve reverse voltage, volts junction capacitance, pf peak forword surge current amperes number of cycles at 60h z ambient temperature, average forward current instantaneous forward current fi g. 5-- peak forword surge current pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) -1.0a - 0 . 25a 0 +0.5a t rr 1cm 0 . 6 0 . 1 0 . 2 0 . 8 1 . 0 0 . 4 1 . 0 2 . 0 4 . 0 40 20 1 0 0 10 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 byv27-50 - byv27-200 BYV27-300 -byv27-400 t j =25 pulse width=300 ?? 100 0 . 1 1 10 100 10 20 40 200 400 0 . 2 0 . 4 2 4 20 40 0.4 0.8 0 0 250 1.2 1.6 2 . 0 50 100 150 200 byv27-600 byv27-50 - byv27-200 BYV27-300 - byv27-400 single phase half wave 60hz resistive or inductive load 0.375"(9.5mm)lead length 8.3ms si ngl e hal f sine-w ave 10 20 30 40 60 50 1 2 5 1 0 2 0 50 100 0 byv27- 50 - byv27-400 byv27- 600 www.diode.kr diode semiconductor korea
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